method for the manufacture of dislocation-free

Method of obtaining big

Using this method is impractical to obtain large single crystals of gallium antimonide with high structural perfection (low-density disloc the tion, evenly distributed through the crystal). A method of obtaining single crystals of compounds A 3 B 5 by the Czochralski

Method for improving the efficiency of a solar cell and an

article{osti_5525577, title = {Method for improving the efficiency of a solar cell and an improved cadmium sulfide/copper sulfide photovoltaic cell}, author = {Peterson, T M}, abstractNote = {A CdS/Cu /SUB x/ S solar cell and method of fabricating the solar cell.

Methods for Detection of Subsurface Damage: A Review

2018/5/9Subsurface damage is easily induced in machining of hard and brittle materials because of their particular mechanical and physical properties. It is detrimental to the strength, performance and lifetime of a machined part. To manufacture a high quality part, it is necessary to detect and remove the machining induced subsurface damage by the subsequent processes. However, subsurface damage

Advances in Mathematical Sciences and Applications

An adapted boundary element method for the clamped plate problem in a polygonal plane domain / pp.505–527 R. Gianni A free boundary problem arising in the study of the viscoplastic impact of a rod / pp.529–539 M. Frmond, K. Kuttler, B. Nedjar, and M

Nanostructured Pure and Doped Zirconia: Synthesis

Zirconia is a multifunctional material with potential applications in wide domains. Rare-earth doped zirconia and stabilized zirconia yield interesting properties based on the phase transitions induced by the sintering conditions. Zirconia nanopowders were prepared by hydrothermal technique. Synthesis methods of zirconia with various rare earths are discussed here. An overview of the sintering

Influence of steps in the manufacture of large

Influence of steps in the manufacture of large-diameter pipe on its final properties Influence of steps in the manufacture of large-diameter pipe on its final properties Kolbasnikov, N.; Zotov, O.; Martyashov, I.; Sulyagin, R. 2013-04-10 00:00:00 An approach has been developed for simulating multistep plastic deformation—for example, rolling on a thick-sheet mill—by the tension-compression

High Sensitive Methods for Health Monitoring of

Now, the method is developed as digital board computer for structural health monitoring (SHM) in different aero-engines. Roots of the method date back to years 20 of the 20th century, when it was drawn up in the analogue version by Sir Campbell to needs of].

Structure and Properties of Dislocations in Silicon

2010/11/23The direction along the contour s is that of a right-hand screw relative to the chosen direction along the dislocation line l, that is, relative to the unit vector t tangent to the dislocation line (Frank, 1951).The edge dislocation, introduced by Orowan (1934), Polanyi (1934), and Taylor (1934a, 1934b), is represented by the line l along which the vectors t and b are perpendicular.

Method of growing large

A method of growing a crystalline ingot having a 110 orientation, such as a dislocation-free ("DF") crystalline ingot, is provided. The method of manufacture includes providing a liquidous melt. Next, a seed crystal having a 110 crystal direction is contacted with

PLASTIC DEFORMATION IN MATERIALS PROCESSING

most effectively device a fabrication method for an object of a certain final shape. Plastic deformation in the form of slip occurs along the close-packed lattice planes, where the energy requirement for dislocation motion is minimized. Slip inside a crystal

Method for reducing thermal shock in a seed crystal during

A method of growing a crystalline ingot, such as a dislocation free (DF) crystalline ingot, is provided including the steps of providing a melt having an at least partially solidified surface. Next, a seed crystal is brought into contact with the solidified portion of the surface of the melt and the temperature of the seed crystal is permitted to stabilize.

Mapping dislocation densities resulting from severe

Mapping dislocation densities resulting from severe plastic deformation using large strain machining - Volume 33 Issue 22 II. EXPERIMENTAL METHODS Toward the aforementioned objective, oxygen-free high conductivity (OFHC) copper was annealed at 973 K for 2

Effect of Sn for the dislocation

The optical properties of structures, including tin-rich island arrays on silicon pedestals, were studied by the photoluminescence method. The photoluminescence signal was obtained at the temperature of 77 K and was observed in the range of 1.3–1.7 μm with the photoluminescence maximum close to the wavelength of 1.55 μm.

Manufacture and Characterization of Mucoadhesive

The spectra of GG show a broad absorption band due to free OH group in the range of 3000 cm −1 and 3500 cm −1; a shoulder around 2900 cm −1 can be attributed to C–H stretch of alkane. Further, the spectra show bands in the range of 1600 cm −1 and 1400 cm −1 which can be ascribed to C–O stretching of carboxylate ion.

Low dislocation density, high power InGaN laser diodes

By using their proprietary FIELO-like technology called "DEEP" (dislocation elimination method), they are able to produce much larger low-dislocation-density areas on their wafers. Sony and o are currently manufacturing prototypes of high power laser diodes on this type of substrate (see Ref. Reference Takeya, Tojyo, Asano, Ikeda, Mizuno, Matsumoto, Goto, Yabuki, Uchida and Ikeda [4

High Sensitive Methods for Health Monitoring of

Now, the method is developed as digital board computer for structural health monitoring (SHM) in different aero-engines. Roots of the method date back to years 20 of the 20th century, when it was drawn up in the analogue version by Sir Campbell to needs of].

Algorithms for the Solution of the Nonlinear Least

This paper describes a modification to the Gauss–Newton method for the solution of nonlinear least-squares problems. The new method seeks to avoid the deficiencies in the Gauss–Newton method by improving, when necessary, the Hessian approximation by specifically including or approximating some of the neglected terms.

A Selective Review of the Simulation of the Defect

In large crystals of interstitial dislocation loops and microvoids are considered as major grown-in microdefects in dislocation-free silicon crystals [8-10]. Let us briefly consider the types grown-in microdefects, which are included in experimental and technological classifications.

Methods for Detection of Subsurface Damage: A Review

2018/5/9Subsurface damage is easily induced in machining of hard and brittle materials because of their particular mechanical and physical properties. It is detrimental to the strength, performance and lifetime of a machined part. To manufacture a high quality part, it is necessary to detect and remove the machining induced subsurface damage by the subsequent processes. However, subsurface damage

The Methods of Preparation of Ti

2011/11/28Crucible-free zone melting – or the floating zone process known as the FZ method represents another specific preparation method. The formation of a narrow melted zone is performed using electron heating. The melting takes place in a vacuum, and values of 10-2

Frontiers

In the application of traditional catalysts, there is a method to control the catalyst activity by treating the induced material itself. A quintessential method is the manufacture of TiO 2 (Chen J. et al., 2020) doped composite semiconductor with good catalytic effect, including but not limited to SnO 2 /TiO 2 (Kusior et al., 2018), WO 3 /TiO 2 (Wang et al., 2019), MoO 3 /TiO 2 (Liu et al

If you require this document in an alternative format, please

sity, the threading dislocation density of GaN on sapphire epilayers can be reduced significantly from 109 cm 2 to 3.0 107 cm 2. Raman spectroscopy, used to monitor the strain in the overgrown GaN epi-layers, shows that the position of the GaN E 2 H

Huajie Chen

Huajie Chen patents Recent bibliographic sampling of Huajie Chen patents listed/published in the public domain by the USPTO (USPTO Patent Application #,Title): 10/30/14 - 20140322873 - High performance stress-enhanced mosfets using si:c and sige epitaxial source/drain and method of manufacture

Effect of the Spherical Indenter Tip Assumption on the Initial

dislocation-free region in a metallic crystal may require very small radii. Here, experimentalists can take advantage of the imperfect manufacture of nominally sharp geometries, such as the three-sided pyramidal Berkovich indenter. The most common view is that

Algorithms for the Solution of the Nonlinear Least

This paper describes a modification to the Gauss–Newton method for the solution of nonlinear least-squares problems. The new method seeks to avoid the deficiencies in the Gauss–Newton method by improving, when necessary, the Hessian approximation by specifically including or approximating some of the neglected terms.

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