influence of argon flow rate on melt convection and incorporation of sic in multicrystalline silicon

Silver Colloid Nanoparticles: Synthesis, Characterization,

2006/8/1A one-step simple synthesis of silver colloid nanoparticles with controllable sizes is presented. In this synthesis, reduction of [Ag(NH3)2]+ complex cation by four saccharides was performed. Four saccharides were used: two monosaccharides (glucose and

Additive Manufacturing: Unlocking the Evolution of

1 Introduction In the 21 st century, energy and climate challenges that the world is facing are intertwined. The total global energy consumption is approximately 18 TW, 1 of which 78.3% was provided by fossil fuels in 2014. 2 Renewable energy technologies can provide a long term solution for sustainable development, however they cannot replace fossil fuel energy in the short or mid‐term. 3

International Journal of Modern Physics B

The influence of hot working parameters on flow behavior, hot workability and microstructure evolution was systemically investigated. The results showed that all the flow curves exhibited a peak stress at very low strains (0.1) followed by extensive flow softening.

System for growth of single crystal materials with extreme

Using the shallow melt system with a constant melt level, convection in the melt under the rotated, growing crystal 16 is greatly decreased. Even in the area directly under the rotating crystal 16, the flow is controlled and directed rather than turbulent.

Numerical study of the influence of melt convection on the

2011/12/1The crucible dissolution rate is estimated from the whole mass of carbon which can be found in the melt after a given period of time. In order to understand the influence of melt convection on the crucible dissolution rate, the case when melt convection is 2.

J. Compos. Sci.

Ever-increasing significance of composite materials with high thermal conductivity, low thermal expansion coefficient and high optical bandgap over the last decade, have proved their indispensable roles in a wide range of applications. Hexagonal boron nitride (h-BN), a layered material having a high thermal conductivity along the planes and the band gap of 5.9 eV, has always been a promising

Kyushu University [Koichi Kakimoto (Professor) Research

It was found that the argon flow has an important effect on the silicon melt convection, which will further influence the evaporation characteristic of SiO at the melt free surface. The amount of SiO carried away by the argon flow increases with increase in the argon flow rate while the CO gas can be prevented from being transported to the melt free surface.

International Journal of Modern Physics: Conference Series

According to the results, at the mixture of commercial acetylene and oxygen gas, as nitrogen flow rate was increased, the diamond nanocrystallites was high density on the microcrystallites. At the mixture of high purity acetylene and oxygen gas, the optimal nitrogen flow rate was 0.500 cm 3 /s, and the diamond nanocrystallites was synthesized continuously on the diamond microcrystallites.

The Journal of Physical Chemistry C

Does Bridging Geometry Influence Interfacial Electron Transfer Dynamics? Case of the Enediol-TiO 2 System Sreejith Kaniyankandy, Sachin Rawalekar, Anik Sen, Bishwajit Ganguly*, and Hirendra N. Ghosh* The Journal of Physical Chemistry C 2012, 116, 1

Essentials of materials science and engineering

2-19 Such materials as silicon carbide (SiC) and silicon nitride (Si 3 N4 ) are used for grinding and polishing applications. Rationalize the choice of these materials for this application. Section 2-4 The Periodic Table 2-20 Explain the role of van der Waals forces in

He recognized that the transition between 1460 interstitial-rich and vacancy-rich silicon depended on the ratio of the growth rate to the axial thermal gradient at the melt interface (V/G). For values of V/G less than a critical value, the predominant point defects would be interstitials, while for values of V/G greater than this critical value, they would be vacancies.

Chin. Phys. Lett.

Raman scatting patterns also demonstrate that the strain stress in SiC films is released due to the incorporation of Al ions and the increase of film thickness. Furthermore, due to the catalysis of surface reaction which is induced by trimethylaluminium, the growth rate is increased greatly and the growth process varies from three-dimensional island-growth mode to step-flow growth mode.

Synthetic Phase with the Structure of Apatite

Marangoni convection, which is caused by the differences in the surface tension over the melt surface, flows along the interface from the surface to a central region of the melt. On the other hand, forced convection, which is caused by the crystal rotation, flows towards the periphery from the center [ 102 ].

Solar Silicon Processes

As the density of silicon is close to that of the melt, in both cases the electrodeposited silicon remains adherent at the electrodes. The low Faradaic yield (40% in the best case) was explained as due to loss of SiO by sublimation and to the partial electronic conductivity of the melt, due the presence of a suspension of carbon particles detached from the electrode.

He recognized that the transition between 1460 interstitial-rich and vacancy-rich silicon depended on the ratio of the growth rate to the axial thermal gradient at the melt interface (V/G). For values of V/G less than a critical value, the predominant point defects would be interstitials, while for values of V/G greater than this critical value, they would be vacancies.

KAKEN — Research Projects

We developed new methods of crystal growth of silicon and SiC by using external electro-magnetic fields. The study focused on the crystal growth methods of liquid phase epitaxy and sublimation method. We clarified how gas pressure in a furnace during crystal growth in a furnace for sublimation growth affects growth velocity of SiC. Furthermore, we studied the effects on frequency on flow of

Silicon Feedstock, Crystallisation and Wafering

2BV.3.27 Influence of Argon Flow Rate on Melt Convection and Incorporation of SiC in Multicrystalline Silicon C. Schmid, Fraunhofer ISE, Freiburg, Germany et al. 2BV.3.28 Growth of N-Type Si Large Single Bulk Crystals for Solar Cells Using Small Crucibles with a Given Diameter by the Noncontact Crucible Method K. Nakajima, Kyoto University, Kyoto, Japan et al.

Issues in Applied Physics: 2011 Edition

Issues in Applied Physics / 2011 Edition is a ScholarlyEditions eBook that delivers timely, authoritative, and comprehensive information about Applied Physics. The editors have built Issues in Applied Physics: 2011 Edition on the vast information databases of

Universal Journal of Physics and Application

A thorough analysis of the influence of the mass flow rate on the efficiency and the working of a thermal/photovoltaic collector is presented. The analysis is made using the equations of the components of heat transfer cascade into a matrix of four unknown's which are the glass, cells, fluid and insulation plate temperature.

Influence of Nanoparticles on Thermal and Electrical

A 20% increase in the ZT-value was obtained by the incorporation of SiC nanoparticles into the Bi 2 Te 3 alloy at 0.2 volume percent. Further addition of SiC nanoparticles resulted in a decrease of the ZT value since the SiC particles had a higher electrical resistivity

Review Article: Stress in thin films and coatings: Current

2018/3/5In this section, we describe recent progress in developing a rate-equation based model to understand the dependence of stress on the temperature, growth rate, and evolving microstructure. Many different kinetic processes occurring simultaneously during film growth can influence the stress, including deposition, attachment of atoms to terrace ledges, GB formation, and diffusion of atoms on

Synthetic Phase with the Structure of Apatite

Marangoni convection, which is caused by the differences in the surface tension over the melt surface, flows along the interface from the surface to a central region of the melt. On the other hand, forced convection, which is caused by the crystal rotation, flows towards the periphery from the center [ 102 ].

He recognized that the transition between 1460 interstitial-rich and vacancy-rich silicon depended on the ratio of the growth rate to the axial thermal gradient at the melt interface (V/G). For values of V/G less than a critical value, the predominant point defects would be interstitials, while for values of V/G greater than this critical value, they would be vacancies.

Characterization and Failure Analysis of Plastics

Both types are available in a wide range of melt-flow grades. Both the homopolymers and copolymers are available in several unmodified and glass-fiberreinforced injection-molding grades. Both are available in grades filled with polytetrafluoroethylene (PTFE) or silicone, and the homopolymer is available in chemically lubricated low-friction formulations.

Journal of Crystal Growth Journal Impact IF 2020

The influence of temperature on the silicon droplet evolution in the homoepitaxial growth of 4H-SiC Y. Li M.M. Gao Jin Li A. Gao S. Liang H.B. Li H.B. Li Uniformly valid asymptotic solutions of rod eutectic growth in directional solidification for solid-liquid interface slopes being the small order

Additive Manufacturing: Unlocking the Evolution of

1 Introduction In the 21 st century, energy and climate challenges that the world is facing are intertwined. The total global energy consumption is approximately 18 TW, 1 of which 78.3% was provided by fossil fuels in 2014. 2 Renewable energy technologies can provide a long term solution for sustainable development, however they cannot replace fossil fuel energy in the short or mid‐term. 3

Kyushu University [Shin

The growth rate of the deposited film depended strongly on the SiH 4 flow rate, and a smooth surface could not obtained at high SiH 4 flow rate. The surface morphology was also affected by the C/Si ratio. A high C/Si ratio was required to obtain smooth SiC films.

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