in-situ growth of silicon nanowires on graphite by molten

Copyright by Timothy Daniel Bogart 2014

Silicon Nanowires: Synthesis and Use as Lithium-Ion Battery Anodes by Timothy Daniel Bogart, B.Ch.E. Dissertation Presented to the Faculty of the Graduate School of The University of Texas at Austin in Partial Fulfillment of the Requirements for the Degree of

Molten Gallium as a Catalyst for the Large

While attempting to grow Si nanowires by using molten Ga as a catalyst and silicon wafer as a Si source, we unintentionally obtained SiO2 nanowires in a high yield.17 Surprisingly, these nanowires demonstrate many amazing growth phenomena unlike process.

Tracking the catalyzed growth process of nanowires by in situ x

Tracking the catalyzed growth process of nanowires by in situ x-ray diffraction Melanie Kirkham, Zhong Lin Wang, and Robert L. Snydera School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA Received 24

Adsorbed O2 on the Graphite‐Induced Growth of

Vapor‐solid mechanism was proposed for the growth mode of the as‐grown ultra‐long 6H–SiC nanowires. This study not only provided new insight into the growth mode for in situ synthesizing 6H–SiC nanowires on silicon‐based ceramics, but also suggested a new design methodology for synthesizing ultra‐long nanowires.

Tracking the catalyzed growth process of nanowires by in

Quasi-one-dimensional nanostructures of silicon, oxides, and other materials show great promise for a variety of applications. These nanostructures are commonly grown using metal catalyst nanoparticles. This paper investigates the growth mechanism of Au-catalyzed Si nanowires through in situ x-ray diffraction, and the results are compared to previously studied Au-catalyzed ZnO nanorods. The Si

Processing and Characterization of Silicon Nitride

Crystalline silicon nitride nanofiber papers were formed in situ on the surface of graphite plates by the carbothermal reduction method using silica nanopowder and silica gel precursor pellets. The carbothermal reduction process was performed at a temperature of 1450C in a flowing nitrogen atmosphere inside a horizontal alumina tube furnace.

In Situ TEM Observation of a Microcrucible Mechanism

In the hypothetical microcrucible growth mechanism for nanowires, a molten catalytic particle located in a pore on a substrate continually feeds the outward growth of the wire. To observe such a mechanism requires the ability to examine nanowire growth in situ. Boston et al. (p. [623][1]) studied various stages of Y2BaCuO5 nanowire growth using transmission electron microscopy and were able to

Synthesis of silicon/germanium nanowires and field

We find the high growth rate is responsible for the silicon nanowires with less growth defects when they are grown by use of silicon tetrachloride as a precursor and hydrogen as a carrier gas. Based on this funding, large area, high aspect ratio, h111i oriented silicon nanowires are successfully grown on Si (111) and Si (100).

Electrodeposited Silicon Nanowires from Silica

Rational manipulation of size, surface chemistry, and electrode configuration is of prime importance to enhance lithium storage capability of silicon-based anode for Li-ion batteries. Herein, Si nanowires with small sizes (20–30 nm in diameter) and ultrathin surface oxide layer (∼1 nm in thickness) are directly electrodeposited on carbon cloth from soluble SiO2 in molten chloride salts

Template‐Free Electrochemical Formation of Silicon

A template‐free electrochemical preparation of silicon nanotubes (Si‐NT) is herein achieved by co‐electrolysis of SiO 2 and AgCl in molten NaCl–CaCl 2 at 850 C. The in situ electrodeposited Ag facilitates the generation of a liquid Ag–Si intermediate, triggering a liquid–solid mechanism to direct the growth of Si‐NT.

In situ synthesis and characterization of pure SiC

The nanowires possess Si–C chemistry. The length and thickness of the nanowires are generally from several tens to over 100 μm and ∼80 nm, respectively. The process also demonstrated the possibility of in situ deposition of thin graphite coatings on the SiC

Annihilating the Formation of Silicon Carbide: Molten Salt Electrolysis of Carbon–Silica Composite to Prepare the Carbon–Silicon

based molten salts.[44,45] Mai et al.[46] reported that Si nanowires can be prepared by electrode position in molten NaCl-KCl-MgCl 2-CaSiO 3. Yin et al.[47] tested the Li storage properties of the electrolytic Si film obtained in molten CaCl 2-nano SiO 2, and the

Pilot

Silicon nanowires are a kind of promising negative electrode material for lithium-ion batteries. However, the existing production technologies can hardly meet the demands of silicon nanowires in quality and production ability. In this paper, silicon nanowires are successfully prepared by molten salt electrolysis in a pilot-plant. The pilot-plant was successfully operated for 14 months with a

Enhancing the lithiation rate of silicon nanowires by the

Silicon (Si) has a very high lithium storage capacity and is being explored as a negative electrode material in lithium-ion batteries (LIBs). Si nanowires can exhibit relatively stable performance for many cycles of charging; however, conductive carbon must often be added to the electrode layer to improve the rate capability due to the relatively low electrical conductivity of Si.

A Systematic Study on Vapor

The involvement of graphite and Ar flow simultaneously has been suggested to be necessary through the experiments observations and rational comparison. With a 50 nm ZnO coated silicon substrate subjected to the annealing at ~800-900 o C for 1 hour in absence of graphite and carrier gas, 20-50 nm ZnO nanoislands formed quite uniformly (Fig. 3).

Sensitive detection of clenbuterol by hybrid iridium/silicon

Sensitive detection of clenbuterol by hybrid iridium/silicon nanowire-enhanced laser desorption/ionization mass spectrometry† Rui Lv, ‡ a Enhui Wu, ‡ a Renfei Wu, ‡ a Wen Shen, a Chongqing Ma, a Rui Shi, a Ruochen Guo, a Mingwang Shao a and Jian Liu * a

Structural and electrochemical study of the reaction of lithium with silicon nanowires

In our previous work [8], we have shown that silicon nanowires (SiNWs) grown directly onto stainless steel current collectors display stable discharge capacities 3000mAhg−1. Using ex situ scanning electron microscopy (SEM), transmission electron

Synthesis of Core

Figure 6(a) is a schematic illustration of the growth mechanism. It involved in the formation of the amorphous-carbon-coated SiO x core are proposed as follows. Initially, the phosphorus coating on the silicon substrate forms a P film, as illustrated in Figure 6(a)-(i).-(i).

Recent advances in the Van der Waals epitaxy growth of

The heteroepitaxial growth of III‐V NWs on 2D materials including graphene layer (GP) (note that GP refers to graphene/SiO 2 /silicon substrate) and graphitic substrate (GS) (here, few layers of graphite is cleaved and transferred onto silicon substrate) is highly []

Growth of single crystal nanowires

Lu et al., Growth of Single Crystal Silicon Nanowires in Supercritical Solution from Tethered Gold Particles on a Silicon Substrate, Nov. 6, 2002 (Web Published), American Chemical Society, pp. 1-10. Nedeljkovic et al., "Growth of InP Nanostructures via Reaction of Indium Droplets with Phosphide Ions: Synthesis of InP Quantum Rods and InP-TiO2 Composites", J. Am. Chem. Soc. 2004, vol. 126

Verification and implications of the

Verification and implications of the dissolution–electrodeposition process during the electro-reduction of solid silica in molten CaCl 2 Wei Xiao a, Xin Wang a, Huayi Yin a, Hua Zhu a, Xuhui Mao a and Dihua Wang * ab a School of Resource and Environmental Sciences, Wuhan

Growth and properties of InGaAs nanowires on silicon

Janghyun Jo, Youngbin Tchoe, Gyu-Chul Yi, Miyoung Kim, Real-Time Characterization Using in situ RHEED Transmission Mode and TEM for Investigation of the Growth Behaviour of Nanomaterials, Scientific Reports, 10.1038/s41598-018-19857-2, 8, 1, (2018).

Silicon Nanowires Produced by SiO

Abstract: Large-scale silicon nanowires (SiNWs), which consist of a crystalline silicon core and a thick oxide shell with a length of tens of micrometers, were synthesized by evaporation of silicon monoxide (SiO) using a gold-coated silicon wafer as substrate in a low vacuum CVD system.

In

In-Situ Electrochemical Transmission Electron Microscopy for Battery Research - Volume 20 Issue 2 The nominal poor conductivity of the Si NW anode (~1–10 S/cm for lithiated Si; McDowell et al., Reference Mcdowell and Cui 2011) can be increased by coating the Si NW with a thin layer of an electrochemically inactive metal such as copper, with a much higher electrical conductivity (5.910 5

Wettability of Silicon with Refractory Materials: A Review

Figures 4 and 5, surface roughening enhances the wetting of graphite materials by molten silicon. Figure 4: Time-dependent variation of the contact angle of silicon on graphite N with different surface roughness R a. (a) R a = 0.005 μm; (b) R a = 0.30 μm; (c) R a

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