us3931673a - aluminum for bonding si-ge alloys to

Materials for Gas Turbines – An Overview

Materials for Gas Turbines – An Overview 295 Fig. 1. Relative creep capability of titanium alloys used for compressor parts in the form of a Larson Miller plot (Schematic). 3. Compressor blading materials for land based gas tur bines – Special steels Until recently

Materials Safety Data Sheets For Pure Elements

ACI Alloys works with all non-radioactive metals as well as their alloys and ceramics. Due to the nearly infinite number of possible combinations, we include MSDS sheets for the pure elements. For questions involving properties of alloys or ceramics, call us (408

Sputtering Targets 4

ALB Materials Inc provides many kinds of Sputtering Targets with high quality at competitive price. ALB Materials Inc offers sputtering targets in a variety of materials including pure elements or compounds and alloys in purities ranging from 99.5% to 99.9999%. The

Precious Palladium

New palladium-aluminium-based alloys with promising potential for application in the areas of jewellery and watchmaking are presented. A particular emphasis is placed on the mechanical behaviour of ternary palladium-aluminium-ruthenium (PdAlRu) alloys with 95 wt.% Pd. The new alloys combine high plasticity with high hardness relative to common Pd alloys. The low work-hardening rate enables

Multinary Intermetallics from Molten Al. Synthesis of SmNiAl4Ge2

Aluminum fluxes have been used to prepare borides10 at very high temperature (1400 C) and aluminides, but very little has been done with tetrelides (Si, Ge, Sn). Because molten Al dissolves Si without forming a compound,11 we reasoned it might serve as a

Sputtering Targets 4

ALB Materials Inc provides many kinds of Sputtering Targets with high quality at competitive price. ALB Materials Inc offers sputtering targets in a variety of materials including pure elements or compounds and alloys in purities ranging from 99.5% to 99.9999%. The

Protective Coatings for Gas Turbines

bonding, eliminating the need for a rough surface for mechanical bonding. Typical surface treatment includes grit blasting, grinding, and shot peening. Beneficial effects of grit blasting the bond coat surface with Al 2 O 3 on TBC performance are discussed in35 2

Aluminum

Aluminum-silicon alloys without copper have good corrosion resistance in most reagents; only in alkaline solutions which attack silicon as well as aluminum their performance is poor. Copper reduces appreciably the corrosion resistance and so does iron, unless corrected with manganese or chromium.

Mechanism of the Bauschinger effect in Al

2017/1/27Table 1 represents the compositions of the three alloys. For reasons described later, only the richest alloy was characterized extensively. For this alloy, Table 2 compares theoretical precipitate volume fraction (i.e. assuming no solubility of Si and Ge in Al at room temperature, which is in fact less than 0.01%,, ) with the TEM-measured volume fractions.

Material Product Data Sheet Nickel [Cobalt] Chromium Aluminum

GE B50A892 GE B50TF162 GE B50TF192, Class A GKN Aerospace PM 819-44 MTU MTS 1333 Snecma DMR 33.090 Turbomeca LA 657 Ed. 1, PD 2, Ind. 0 U. S. Military USAF 461204 (material only for bond coat) Amdry 9621 GE B50AG16, Class A, except

Bonding in metals and semiconductors

2017/10/28Examples of semiconducting elements are Se, Te, Bi, Ge, Si, and graphite. Semiconductor materials have traditionally been totally inorganic, composed mostly of the lighter P-block elements. More recently, organic semiconductors have become an important field of study and development.

3. Overview of Microfabrication Techniques

2 Again and Again.. A typical process can have 15-20 masks Bulk micromachining Fabrication technologies for the machining of bulk microdevices in silicon 3 3. Overview of MicrofabricationTOC Wafer-level Processes Substrates Wafer Cleaning Oxidation Doping

WebElements Periodic Table Aluminium compounds

This WebElements periodic table page contains compounds information for the element aluminium This section lists some binary compounds with halogens (known as halides), oxygen (known as oxides), hydrogen (known as hydrides), and some other compounds

WAFER LEVEL PACKAGING USING HIGH FORCE BONDING OF

51.6wt% Ge and at 420 C alumiNum-GErmaNium EutEctic wafEr boNdiNG Aluminum-Germanium (AlGe) eutectic wafer bonding is the most widely used wafer-level packaging process for MEMS gyroscopes in high volume production today. The history behind its

Constitution of Alloys and Phase Diagrams

Alloys, containing from 2.06 to 6.67% of carbon, experience eutectic transformation at 2097 F (1147 C). The eutectic concentration of carbon is 4.3%. In practice only hypoeutectic alloys are used. These alloys (carbon content from 2.06% to 4.3%) are called

WAFER LEVEL PACKAGING USING HIGH FORCE BONDING OF

51.6wt% Ge and at 420 C alumiNum-GErmaNium EutEctic wafEr boNdiNG Aluminum-Germanium (AlGe) eutectic wafer bonding is the most widely used wafer-level packaging process for MEMS gyroscopes in high volume production today. The history behind its

Preparation and Properties of a Novel Al

for brazing aluminum and its alloys. For this purpose, a novel Al-Si-Ge-Zn alloy was prepared according to Al-Si-Ge and Al-Si-Zn ternary phase diagrams. The melting characteristics, microstructures, wettability, and processing property of the alloy were

Aluminum Sputtering Target

AEM Deposition: aluminum sputtering target supplier and manufacturer in China! Supply Al sputtering target for the world. Including planar aluminum target and rotary aluminum target. Purity: 99.99-99.9995%. Aluminum planar target: Length 1-48 inch, Width 1-15.75

Thermal Interface Conductance Between Aluminum and Silicon

ductance of Si/Ge increases with increasing temperature from 0.33 GWm 1 K 2 (300 K) to 0.67 GWm 1 K 2 (1000K). 15 Chalopin et al. on the other hand, used an equi-librium MD method to study thermal conductance at Si/Ge interfaces, 6 and both the

Amorphous silicon solar cells

2014/5/29Doping a-Si:H • Doping with phosphorous in c-Si raises the fermi energy level by adding an extra electron • In a-Si:H, P atoms bond only to 3 silicon neighbors, leaving 2 electrons paired in "s" atomic orbitals which do not participate in bonding.

Amorphous silicon solar cells

2014/5/29Doping a-Si:H • Doping with phosphorous in c-Si raises the fermi energy level by adding an extra electron • In a-Si:H, P atoms bond only to 3 silicon neighbors, leaving 2 electrons paired in "s" atomic orbitals which do not participate in bonding.

Influence of Filament and Substrate Temperatures on Structural and Optoelectronic Properties of Narrow Gap a

Si-H2 in the film (Fig. 3), but below 1900 C, the films improved rapidly as demonstrated by the decrease in Si-H2 and increase in photoconductivity (Fig. 3). The relative amount of Ge-H bonding (to total H-bonding) increases monotonically with decreasing Tf ))

Influence of Filament and Substrate Temperatures on Structural and Optoelectronic Properties of Narrow Gap a

Si-H2 in the film (Fig. 3), but below 1900 C, the films improved rapidly as demonstrated by the decrease in Si-H2 and increase in photoconductivity (Fig. 3). The relative amount of Ge-H bonding (to total H-bonding) increases monotonically with decreasing Tf ))

Additive Manufacturing 3D Printing Processes

GE Additive is developing a Binder Jet machine. This process involves a print head that moves across a bed of powder and selectively deposits a liquid binding agent in the shape of the section, bonding these areas together to form a solid part one layer at a time.

Brazeability of a 3003 Aluminum alloy with Al

2002/8/1Al-Si-Cu-based filler metals have been used successfully for brazing 6061 aluminum alloy as reported in the authors' previous studies. For application in heat exchangers during manufacturing, the brazeability of 3003 aluminum alloy with these filler metals is herein further evaluated. Experimental results show that even at such a low temperature as 550 C, the 3003 alloys can be brazed with

Materials for Gas Turbines – An Overview

Materials for Gas Turbines – An Overview 295 Fig. 1. Relative creep capability of titanium alloys used for compressor parts in the form of a Larson Miller plot (Schematic). 3. Compressor blading materials for land based gas tur bines – Special steels Until recently

Aluminium

Aluminium (aluminum in American and Canadian English) is a chemical element with the symbol Al and atomic number 13.Aluminium has a density lower than those of other common metals, at approximately one third that of steel.It has a great affinity towards oxygen, and forms a protective layer of oxide on the surface when exposed to air.

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